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2N7002KW Datasheet

Part Name
Description
MFG CO.
Other PDF
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2N7002KW image

Features
• Low On−Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra−Small Surface Mount Package
• These Devices are Pb−Free and are RoHS Compliant
• ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101

 

Part Name
Description
PDF
MFG CO.
N-Channel Enhancement Mode Field Effect Transistor
CHENMKO CO., LTD.
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
KEC
N-Channel Enhancement Mode Field Effect Transistor
Unspecified
N- & P-Channel Enhancement Mode Field Effect Transistor
Unspecified
P-Channel Enhancement Mode Field Effect Transistor
Unspecified
N-Channel Enhancement Mode Field Effect Transistor
CHENMKO CO., LTD.
N-Channel Enhancement Mode Field Effect Transistor
CHENMKO CO., LTD.
N-Channel Enhancement Mode Field Effect Transistor
CHENMKO CO., LTD.
P-Channel Enhancement Mode Field Effect Transistor
Unspecified
N-Channel Enhancement Mode Field Effect Transistor
Unspecified

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