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AM2729-110 Datasheet

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MFG CO.
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DESCRIPTION
The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM2729-110 is supplied in the BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 3:1 VSWR CAPABILITY
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 105 W MIN. WITH 6.5 dB GAIN

 

Part Name
Description
PDF
MFG CO.
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