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RJP30E2 Datasheet

Part Name
Description
MFG CO.
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RJP30E2 image

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max
5. Isolated package TO-220FL

RJP30E2

Page Link's: 1  2  3  4  5  6  7 
 

Part Name
Description
PDF
MFG CO.
Low VCE(sat) IGBT High Speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High Speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low Vce(sat) IGBT / High Speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXYS CORPORATION
Low VCE(sat) IGBT with Diode High speed IGBT with Diode
IXYS CORPORATION
Low VCE(sat) High speed IGBT with Diode
IXYS CORPORATION

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