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STB8NC50 Datasheet

Part Name
Description
MFG CO.
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DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 0.7Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES

 

Part Name
Description
PDF
MFG CO.
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
New Jersey Semiconductor
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
Intersil
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
Intersil
N-channel 75V - 0.009Ω - 75A - D2PAK STripFET™ II Power MOSFET
STMicroelectronics
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
Intersil
N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET
STMicroelectronics
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET
STMicroelectronics
8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET
Unisonic Technologies

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