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STP50NE08 Datasheet

Part Name
Description
MFG CO.
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DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE AT 100 oC
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

 

Part Name
Description
PDF
MFG CO.
Single N-Channel Enhancement Mode MOSFET
Fairchild Semiconductor
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION

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