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STW15NB50FI Datasheet

Part Name
Description
MFG CO.
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

 

Part Name
Description
PDF
MFG CO.
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
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9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
Intersil
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
Unspecified
1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET
Intersil
Power MOSFET 14 Amps, 500 Volts N–Channel TO–247
ON Semiconductor
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
New Jersey Semiconductor
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
MagnaChip Semiconductor
6A, 400V and 500V N-Channel IGBTs
Intersil

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