IRF520 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS - STMicroelectronics Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
   
■ TYPICAL RDS(on) = 0.23 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
    ABS, AIR-BAG, LAMPDRIVERS, Etc.)