BF660W View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BF660W

PNP Silicon RF Transistor

Infineon Technologies 

Transition frequency fT = f (IC)

f = 100MHz

VCE = 10V

BF 660W

Collector-base capacitance Ccb = f (VCB)

VBE = vbe = 0, f = 1MHz

Package

Semiconductor Group

4

Aug-14-1996

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