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Part Name
Description
MJE521(1997) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
MJE521
(Rev.:1997)
SILICON NPN TRANSISTOR
STMicroelectronics
MJE521 Datasheet PDF : 4 Pages
1
2
3
4
MJE521
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient
Max
3.12
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 40 V
I
EBO
Emitter Cut-off Current V
EB
= 4 V
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 0.1 A
h
FE
DC Current Gain
I
C
= 1 A
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
1.5%
V
CE
= 1 V
Min. Typ.
40
40
Max.
100
100
Unit
µ
A
µ
A
V
2/4
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