Continuous drain-source current
ID = f (TC)
parameter: VGS ≥ 10 V, T j = 150 ˚C
BSM 101 AR
Drain-source breakdown voltage
V(BR)DSS = b × V(BR)DSS (25 ˚C)
Drain source on-state resistance
R = DS(on) f (ID)
parameter: VGS
Drain source on-state resistance
RDS (on) = f (Tj)
parameter: ID = 200 A; VGS = 10 V
Semiconductor Group
21