CXK5B81020TM View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
Manufacturer
CXK5B81020TM Datasheet PDF : 9 Pages
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CXK5B81020J/TM
โข Read cycle
-12
Item
Symbol
Unit
Min. Max.
Read cycle time
tRC
12
โ
ns
Address access time
tAA
โ
12
ns
Chip enable access time
tCO
โ
12
ns
Output enable to output valid
tOE
โ
6
ns
Output data hold time
tOH
3
โ
ns
Chip enable to output in low Z (CE)
tLZ
3
โ
ns
Output enable to output in low Z (OE) tOLZโ
0
โ
ns
Chip disable to output in high Z (CE)
tHZโ
0
6
ns
Output disable to output in high Z (OE) tOHZโ
0
6
ns
โ Transition is measured ยฑ200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
โข Write cycle
-12
Item
Symbol
Unit
Min. Max.
Write cycle time
tWC
12
โ
ns
Address valid to end of write
tAW
10
โ
ns
Chip enable to end of write
tCW
10
โ
ns
Data valid to end of write
tDW
8
โ
ns
Data hold from end of write
tDH
0
โ
ns
Write pulse width
tWP
10
โ
ns
Address set up time
tAS
0
โ
ns
Write recovery time
tWR
0
โ
ns
Output active from lend of write
tOWโ
4
โ
ns
Write to output in high Z
tWHZโ
0
6
ns
โ Transition is measured ยฑ200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
โ4โ
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