BS250
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at –ID = 100 µA, VGS = 0
–V(BR)DSS 60
70
–
V
Gate Threshold Voltage
at VGS = VDS, –ID = 1 mA
–VGS (th)
1.0
2.0
3.0
V
Gate-Body Leakage Current
at –VGS = 15 V, VDS = 0
–IGSS
–
–
20
nA
Drain Cutoff Current at –VDS = 25 V, VGS = 0
–IDSS
–
–
0.5
µA
Drain-Source ON Resistance
at –VGS = 10 V, –ID = 0.2 A
RDS (ON)
–
3.5
5.0
Ω
Thermal Resistance Junction to Ambient Air
RthJA
–
–
1501)
K/W
Forward Transconductance
at –VDS = 10 V, –ID = 0.2 A, f = 1 MHz
Input Capacitance
at –VDS = 10 V, VGS = 0, f = 1 MHz
gm
–
150
–
mS
Ciss
–
60
–
pF
Switching Times
at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω
Turn-On Time
Turn-Off Time
ton
–
5
–
ns
toff
–
25
–
ns
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.