Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-236AB
0.28A
TO-92
0.30A
* ID (continuous) is limited by max rated Tj.
0.8A
1.0A
Power Dissipation
@ TA = 25°C
0.36W
0.74W
θjc
°C/W
200
125
θja
°C/W
350
170
IDR*
0.28A
0.30A
TN2106
IDRM
0.8A
1.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
60
V
0.6
2.0
V
-3.8 -5.5 mV/°C
0.1 100
nA
1
µA
100
µA
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
0.6
5.0
2.5
∆RDS(ON) Change in RDS(ON) with Temperature
0.70
1.0
GFS
Forward Transconductance
150 400
CISS
Input Capacitance
35
50
COSS
Common Source Output Capacitance
17
25
CRSS
Reverse Transfer Capacitance
7
8
td(ON)
Turn-ON Delay Time
3
5
tr
Rise Time
5
8
td(OFF)
Turn-OFF Delay Time
6
9
tf
Fall Time
5
8
VSD
Diode Forward Voltage Drop
1.2
1.8
trr
Reverse Recovery Time
400
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
A
Ω
Ω
%/°C
m
pF
ns
V
ns
Conditions
ID = 1mA, VGS = 0V
VGS = VDS, ID = 1mA
ID = 1mA, VGS = VDS
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 200mA
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA
VDS = 25V, ID = 500mA
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 25V
ID = 0.5A
RGEN = 25Ω
ISD = 0.5A, VGS = 0V
ISD = 0.5A, VGS = 0V
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.