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Part Name
Description
G04N60P View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
G04N60P
Fast IGBT in NPT-technology
Infineon Technologies
G04N60P Datasheet PDF : 12 Pages
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SGP04N60
SGD04N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
°
C,
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
Ω
,
L
σ
1)
=180nH,
C
σ
1)
=180pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
15
237
70
0.070
0.061
0.131
26 ns
18
284
84
0.081 mJ
0.079
0.160
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=150
°
C
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
Ω
,
L
σ
1)
=180nH,
C
σ
1)
=180pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
16
264
104
0.115
0.111
0.226
26 ns
19
317
125
0.132 mJ
0.144
0.277
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.2 Sep 07
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