JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
VBE
Base-emitter on voltage
IC=-8A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-8A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V
Product Specification
2SA1051
MIN TYP. MAX UNIT
-150
V
-150
V
-5
V
-3.0
V
-1.5
V
-10 μA
-10 μA
55
160
35
60
MHz
2