INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3659
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1.25A
ICBO
Collector Cutoff Current
VCE= 1400V; IE= 0
2.0
V
1.5
V
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
500 mA
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 6A
IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0
2.0
V
0.5 μs
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