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Part Name
Description
J505 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
J505
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
J505 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SJ505(L), 2SJ505(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
I
AP
*
3
E
AR
*
3
Pch*
2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Ta = 25
°
C, Rg
≥
50
Ω
, L=100
µ
H
Ratings
Unit
–60
V
±
20
V
–50
A
–200
A
–50
A
–50
A
214
mJ
75
W
150
°
C
–55 to +150
°
C
2
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