Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SJ505 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ505
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ505 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SJ505(L), 2SJ505(S)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
10
–0.1 –0.3
di / dt = 50 A /
µ
s
V
GS
= 0, Ta = 25
°
C
–1 –3 –10 –30 –100
Reverse Drain Current I
DR
(A)
50000
20000
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Coss
200
100
0
Crss
–10 –20 –30
Drain to Source Voltage
–40
V
DS
–50
(V)
Dynamic Input Characteristics
0
0
V
DD
= –50 V
–25 V
–20
–10 V
–4
I
D
= –50 A
V
DS
–40
–8
V
GS
–60
–12
–80
–100
0
V
DD
= –50 V
–25 V
–10 V
40 80 120 160
Gate Charge Qg (nc)
–16
–20
200
1000
500
200
100
Switching Characteristics
t
d(off)
tf
tr
50
t
d(on)
20
10
–0.1 –0.3
V
GS
= –10 V, V
DD
= –30 V
PW = 10
µ
s, duty <= 1 %
–1 –3 –10 –30 –100
Drain Current I
D
(A)
6
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]