Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
K3846 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
K3846
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
Toshiba
K3846 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
50
Common source
Pulse test
40
30
20
VGS
=
4.5 V
ID
=
26 A
13
6.5
ID
=
26, 13, 6.5 A
10
VGS
=
10 V
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3846
100
10
I
DR
−
V
DS
Common source
Tc
=
25°C
Pulse test
5
10
3
1
VGS
=
0,
−
1 V
1
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
Drain
−
source voltage V
DS
(V)
10000
C
−
V
DS
Ciss
1000
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
100
0.1
1
Coss
Crss
10
100
Drain
−
source voltage V
DS
(V)
V
th
−
Tc
5
Common source
VDS
=
10 V
ID
=
1 mA
4
Pulse test
3
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
−
Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
50
40
VDS
30
20
Dynamic input/output
characteristics
Common source
20
ID
=
26 A
Tc
=
25°C
Pulse test
16
12
16
8
VDS
=
32 V
8
10
4
VGS
0
0
0
20
40
60
80
100
Total gate charge Q
g
(nC)
4
2006-09-27
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]