AS6WA25616-TI View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

Manufacturer

AS6WA25616-TI

3.0V to 3.6V 256K×16 Intelliwatt™ low-power CMOS SRAM with one chip enable

Alliance Semiconductor 

AS6WA25616

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Read cycle (over the operating range)

Parameter

Symbol

Min

Read cycle time

tRC

55

Address access time

tAA

–

Chip select (CS) access time

tACS

–

Output enable (OE) access time

tOE

–

Output hold from address change

tOH

10

CS low to output in low Z

tCLZ

10

CS high to output in high Z

tCHZ

0

OE low to output in low Z

tOLZ

5

UB/LB access time

tBA

–

UB/LB low to low Z

tBLZ

10

UB/LB high to high Z

tBHZ

0

OE high to output in high Z

tOHZ

0

Power up time

tPU

0

Power down time

tPD

–

Shaded areas indicate preliminary information.

Key to switching waveforms

Rising input

Falling input

Read waveform 1 (address controlled)

tRC

Address

DOUT

Previous data valid

tOH

tAA

Read waveform 2 (CS, OE, UB, LB controlled)

Address

OE

CS

LB, UB

DOUT

tRC

tAA

tOE

tOLZ

tACS

tLZ

tBA

tBLZ

Max

Unit

Notes

–

ns

55

ns

3

55

ns

3

25

ns

–

ns

5

–

ns

4, 5

20

ns

4, 5

–

ns

4, 5

55

ns

–

ns

4, 5

20

ns

4, 5

20

ns

4, 5

–

ns

4, 5

55

ns

4, 5

Undefined/don’t care

tOH

Data valid

Data valid

tOH

tOHZ

tHZ

tBHZ

7/9/02; v.1.3

Alliance Semiconductor

P. 4 of 9

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