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Part Name
Description
BF1012 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BF1012
Silicon N-Channel MOSFET Tetrode
Siemens AG
BF1012 Datasheet PDF : 4 Pages
1
2
3
4
BF 1012
Total power dissipation
P
tot
=
f
(
T
S
)
Drain current
I
D
=
f
(
V
G2S
)
300
mW
200
150
100
50
0
0
20 40 60 80 100 120
°C
150
T
S
Insertion power gain
|
S
21
|
2
=
f
(
V
G2S
)
11
mA
9
8
7
6
5
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0
V
6.0
V
G2S
Forward transfer admittance
|
Y
21
| =
f
(
V
G2S
)
10
dB
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
0.0 1.0 2.0 3.0 4.0
SSeemmicioconndduuctcotor
rGGrorouupp
V
6.0
V
G2S
3
3
24
mS
20
18
16
14
12
10
8
6
4
2
0
0.0 1.0 2.0 3.0 4.0
V
6.0
V
G2S
Sep-
1
0
9
9
98
-1
-1
9
1
9
-0
8
1
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