NXP Semiconductors
BF1118(R); BF1118W(R)
Silicon RF switches
0
Lins(on)
(dB)
−1
−2
−3
001aal987
0
ISLoff
(dB)
−20
−40
001aal988
−4
0
200
400
600
800
1000
f (MHz)
Fig 1.
VSK = VDK = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode
forward current).
Measured in test circuit see Figure 3.
On-state insertion loss as a function of
frequency; typical values
−60
0
200
400
600
800
1000
f (MHz)
Fig 2.
VSK = VDK = 3.3 V; RS = RL = 50 Ω; IF = 1 mA (diode
forward current).
Measured in test circuit see Figure 3.
Off-state isolation as a function of frequency;
typical values
V
1 nF
BF1118/BF1118R/
BF1118W/BF1118RW
1 nF
50 Ω
output
100 kΩ
47 kΩ
1 nF
50 Ω
output
Fig 3.
On-state: V = 0 V.
Off-state: V = 3.3 V.
Test circuit
4.7 kΩ
100 kΩ
1 nF
V
001aal989
BF1118_1118R_1118W_1118WR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 June 2010
© NXP B.V. 2010. All rights reserved.
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