DTA144T
PNP SILICON TRANSISITOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Collector Power Dissipation
Pc
200
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
VCE(SAT)
DC Current Transfer Ratio
hFE
Transition Frequency (Note)
fT
Input Resistance
R1
Note: Transition frequency of the device
TEST CONDITIONS
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-50V
VEB=-4V
IC =-5mA, IB= -0.5mA
VCE =-5V, IC= -1mA
VCE=-10V, IE=5mA, f=100MHz
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.5 μA
-0.5 μA
-0.3 V
100 250 600
250
MHz
32.9 47 61.1 kΩ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-065.C