IRF520NSTRR View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF520NSTRR

HEXFET® Power MOSFET

International Rectifier 

IRF520NS/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min.

100

–––

–––

2.0

2.7

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

0.11

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

4.5

23

32

23

7.5

330

92

54

Max.

–––

–––

0.20

4.0

–––

25

250

100

-100

25

4.8

11

–––

–––

–––

–––

–––

–––

–––

–––

Units

V

V/°C

Ω

V

S

µA

nA

nC

ns

nH

pF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA…

VGS = 10V, ID = 5.7A „

VDS = VGS, ID = 250µA

VDS = 25V, ID = 5.7A…

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 5.7A

VDS = 80V

VGS = 10V, See Fig. 6 and 13 „…

VDD = 50V

ID = 5.7A

RG = 22Ω

RD = 8.6Ω, See Fig. 10 „…

Between lead,

and center of die contact

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) …

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 9.7

showing the

A integral reverse

G

––– ––– 38

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V „

––– 99 150 ns TJ = 25°C, IF = 5.7A

––– 390 580 nC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ VDD = 25V, starting TJ = 25°C, L = 4.7mH

RG = 25Ω, IAS = 5.7A. (See Figure 12)

… Uses IRF520N data and test conditions

ƒ ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

** When mounted on FR-4 board using minimum recommended footprint.

For recommended footprint and soldering techniques refer to application note #AN-994.

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