IRF5210STRLPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF5210STRLPBF

HEXFET®Power MOSFET

International Rectifier 

IRF5210S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA

f Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA

Static Drain-to-Source On-Resistance ––– ––– 60 mΩ VGS = 10V, ID = -38A

Gate Threshold Voltage

-2.0 ––– -4.0 V VDS = VGS, ID = -250µA

gfs

Forward Transconductance

9.5 ––– ––– S VDS = -50V, ID = -23A

IDSS

Drain-to-Source Leakage Current

––– ––– -50 µA VDS = -100V, VGS = 0V

––– ––– -250

VDS = -80V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

Qg

Total Gate Charge

––– 150 230 nC ID = -23A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– 22 33

––– 81 120

f VDS = -80V

VGS = -10V

td(on)

Turn-On Delay Time

––– 14 ––– ns VDD = -50V

tr

Rise Time

––– 63 –––

ID = -23A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 72 –––

––– 55 –––

f RG = 2.4Ω

VGS = -10V

LD

Internal Drain Inductance

––– 4.5 ––– nH Between lead,

LS

Internal Source Inductance

––– 7.5 –––

6mm (0.25in.)

from package

Ciss

Input Capacitance

–––

Coss

Output Capacitance

–––

Crss

Reverse Transfer Capacitance

–––

Source-Drain Ratings and Characteristics

Parameter

Min.

IS

Continuous Source Current

–––

2780

800

430

Typ.

–––

and center of die contact

––– pF VGS = 0V

–––

VDS = -25V

–––

ƒ = 1.0MHz, See Fig. 5

Max. Units

Conditions

-38

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

A showing the

––– ––– -140

integral reverse

––– ––– -1.6

––– 170 260

––– 1180 1770

f p-n junction diode.

V TJ = 25°C, IS = -23A, VGS = 0V

f ns TJ = 25°C, IF = -23A, VDD = -25V

nC di/dt = -100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11)

‚ Starting TJ = 25°C, L = 0.46mH

RG = 25Ω, IAS = -23A. (See Figure 12)

ƒ ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C.

2

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… When mounted on 1" square PCB (FR-4or G-10

Material). For recommended footprint and soldering

techniques refer to application note #AN-994.

www.irf.com

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