IRF7862PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF7862PBF

HEXFET©
Power MOSFET

International Rectifier 

IRF7862PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

30

–––

–––

–––

1.35

–––

–––

–––

–––

–––

–––

0.023

3.0

3.7

–––

-5.4

–––

–––

–––

–––

–––

–––

3.3

4.5

2.35

–––

1.0

150

100

-100

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

ee mΩ

VGS = 10V, ID = 20A

VGS = 4.5V, ID = 16A

V VDS = VGS, ID = 100µA

mV/°C VDS = VGS, ID = 250µA

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

87 ––– –––

––– 30 45

S VDS = 15V, ID = 16A

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 7.5 –––

VDS = 15V

––– 3.1 ––– nC VGS = 4.5V

––– 9.8 –––

ID = 16A

––– 9.6 –––

See Figs. 15 & 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 12.9 –––

Qoss

Output Charge

Rg

Gate Resistance

––– 18 ––– nC VDS = 16V, VGS = 0V

––– 1.0 1.6 Ω

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

––– 16 –––

VDD = 15V, VGS = 4.5V

––– 19 ––– ns ID = 16A

––– 18 –––

RG = 1.8Ω

––– 11 –––

See Fig. 18

Ciss

Input Capacitance

––– 4090 –––

VGS = 0V

Coss

Output Capacitance

––– 810 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 390 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

d Parameter

Single Pulse Avalanche Energy

™ Avalanche Current

Typ.

–––

–––

Max.

350

16

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 3.1

––– ––– 170

––– ––– 1.0

––– 17 26

––– 33 50

MOSFET symbol

D

A showing the

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 16A, VGS = 0V

e ns TJ = 25°C, IF = 16A, VDD = 15V

nC di/dt = 430A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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