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Part Name
Description
IXGT28N60B View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXGT28N60B
Low VCE(sat)IGBT
IXYS CORPORATION
IXGT28N60B Datasheet PDF : 5 Pages
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5
Fig. 13. Dependence of Sw itching
Tim e on Tem perature
500
t
d(off)
450
t
fi
-
- - - - -
R
G
= 10
Ω
400
V
GE
= 15V
V
CE
= 480V
I
C
= 56A
350
300
I
C
= 14A
250
I
C
= 28A
200
I
C
= 56A
150
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
C
ies
IXGH 28N60B
IXGT 28N60B
Fig. 14. Gate Charge
15
V
CE
= 300V
I
C
= 28A
12
I
G
= 10mA
9
6
3
0
0
10
20
30
40
50
60
70
Q
G
- nanoCoulombs
C
oes
100
10
0
1
C
res
5 10 15 20 25 30 35 40
V
C E
- Volts
Fig. 16. Maxim um Transient Therm al Resistance
0.5
0.1
1
© 2003 IXYS All rights reserved
10
100
Pulse Width - milliseconds
1000
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