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Part Name
Description
ST3414S23RG View Datasheet(PDF) - STANSON TECHNOLOGY
Part Name
Description
Manufacturer
ST3414S23RG
N Channel Enhancement Mode MOSFET
STANSON TECHNOLOGY
ST3414S23RG Datasheet PDF : 6 Pages
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ST3414
N Channel Enhancement Mode MOSFET
4.0A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
V
GS
=0V,I
D
=-250uA 20
V
V
DS
=VGS,I
D
=250uA 0.40
1.0 V
V
DS
=0V,V
GS
=
±
12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=55
℃
V
DS
≧
5V,V
GS
=4.5V
V
GS
=4.5V,I
D
=4.2A
V
GS
=2.5V,I
D
=3.4A
V
GS
=1.8V,I
D
=2.8A
V
DS
=5V,I
D
=3.6V
±
100 nA
1
5
uA
6
A
0.040
0.055
Ω
0.075
10
S
I
S
=1.6A,V
GS
=0V
0.8 1.2 V
V
DS
=10V
V
GS
=4.5V
I
D
=2.8A
V
DS
=6V
V
GS
=0V
f=1MH
z
V
DD
=6V
R
L
=6
Ω
I
D
=1.0A
V
GEN
=4.5V
R
G
=6
Ω
4.8 8
1.0
nC
1.0
485
85
pF
40
8 14
12 18
nS
30 35
12 16
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414 2006. V1
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