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Part Name
Description
T14L2M16A View Datasheet(PDF) - Taiwan Memory Technology
Part Name
Description
Manufacturer
T14L2M16A
128K X 16 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
T14L2M16A Datasheet PDF : 12 Pages
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tm
TE
CH
DATA RETENTION CHARACTERISTICS
Preliminary T14L2M16A
PARAMETER
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention
Time
Operation Recovery Time
SYM.
V
DR
I
CCDR
t
CDR
TEST CONDITION
CE
≥
V
CC
-0.2V
V
IN
≥
Vcc -0.2V or
V
IN
≤
0.2V
MIN.
2.0
-
0
MAX.
-
300
-
UNIT
V
uA
ns
t
R
t
RC
-
ns
DATA RETENTION WAVEFORM
( Ta =
0 ~ +70
°
C
)
Data Retention Mode
Vcc
Vcc_typ
tCDR
VDR > 2.0V
CE
VIH
CE >Vcc- 0.2V
Vcc_typ
tR
VIH
TM Technology Inc. reserves the right
P. 10
to change products or specifications without notice.
Publication Date: AUG. 2002
Revision:0.A
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