MG65PB08 View Datasheet(PDF) - Oki Electric Industry

Part Name

Description

Manufacturer

MG65PB08

0.25µm Embedded DRAM/Customer Structured Arrays

Oki Electric Industry 

s MG63P/64P/65P s ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

DC Characteristics (VDD Core = 2.25 to 2.75 V, VDD I/O = 3.0 to 3.6 V, VSS = 0 V, Tj = -40° to +85°C)

Parameter

Symbol

Conditions

Rated Value

Min.

Typ. [1]

Max.

Unit

High-level input voltage

VIH

Low-level input voltage

VIL

TTL- level Schmitt

Vt+

Trigger input buffer

Threshold voltage

Vt-

∆Vt

High-level output voltage (Output buffer)

VOH

Low-level output voltage (Output buffer)

VOL

High-level input current (Input buffer)

IIH

Low-level input current (Normal input buffer)

IIL

3-state output leakage current

IOZH

(Normal input buffer)

IOZL

Stand-by current [2]

IDDQ

TTL input (normal)

TTL input (normal)

2.0

–

VDD

-0.0

–

0.8

TTL input

–

1.5

2.0

0.7

1.0

–

V

Vt+ - Vt-

0.4

0.5

–

IOH = -100 µA

VDD-0.2

–

–

IOH = -1, -2, -4, -6, -8, -12, -24 mA 2.4

–

–

IOL = 100 µA

–

–

0.2

µA

IOL = 1, 2, 4, 6, 8, 12, 24 mA

–

–

0.4

VIH = VDD

–

–

10

VIH = VDD (50-kΩ pull-down)

10

66

200

VIL = VSS

-10

–

10

VIL = VSS (50-kΩ pull-up)

-200

-66

-10

VIL = VSS (3-kΩ pull-up)

-3.3

-1.1

-0.3

mA

VOH = VDD

-10

–

10

µA

VOH = VDD (50-kΩ pull-down)

10

66

200

VOL = VSS

VOL = VSS (50-kΩ pull-up)

-10

–

-200

-66

10

µA

-10

VOL = VSS (3-kΩ pull-up)

-3.3

-1.1

-0.3

mA

Output open, VIH = VDD, VIL = VSS

Design Dependent

µA

1. Typical condition is VDD I/O = 3.3 V, VDD Core = 2.5 V, and Tj = 25°C on a typical process.

2. RAM/ROM should be in powerdown mode.

8

Oki Semiconductor

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