NXP Semiconductors
Quadruple bidirectional ESD transient
voltage suppressor
Product data sheet
BZA408B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
VALUE
340
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
VRWM
VR
VZSM
IR
Cd
αch (p to p)
working reverse voltage
reverse voltage
non-repetitive peak reverse voltage
reverse current
diode capacitance
pin to pin channel separation
Itest = 5 mA
tp = 1 ms; IZSM = 2 A
VR = VRWM
see Fig.3
VR = 0; f = 1 MHz
VR = 5 V; f = 1 MHz
note 1; see Fig.4
−
5
V
5.5
−
V
−
10
V
−
100
nA
−
75
pF
−
55
pF
70
−
dB
Note
1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.
1998 Oct 15
3