FB180SA10 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

FB180SA10

HEXFET® Power MOSFET

International Rectifier 

FB180SA10

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient

RDS(on)

VGS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ls

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

100 ––– ––– V VGS = 0V, ID = 250µA

––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.0065 W VGS = 10V, ID = 108A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

93 ––– ––– S VDS = 25V, ID = 108A

––– ––– 50

––– ––– 500

µA VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

––– ––– 200 nA VGS = 20V

––– ––– -200

VGS = -20V

––– 250 380

ID = 180A

––– 40 60 nC VDS = 80V

––– 110 165

VGS = 10.0V, See Fig. 6 and 13 „

––– 45 –––

VDD = 50V

––– 351 ––– ns ID = 180A

––– 181 –––

RG = 2.0W (Internal)

––– 335 –––

RD = 0.27W, See Fig. 10 „

––– 5.0 ––– nH Between lead,

and center of die contact

––– 10700 –––

VGS = 0V

––– 2800 ––– pF VDS = 25V

––– 1300 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

––– ––– 180 A showing the

integral reverse

––– ––– 720

p-n junction diode.

––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V „

––– 300 450

––– 2.6 3.9

ns TJ = 25°C, IF = 180A

µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L =43µH

RG = 25W , IAS = 180A. (See Figure 12)

ƒ ISD £ 180A, di/dt £83A/µs, VDD £ V(BR)DSS,

TJ £ 150°C

„ Pulse width £ 300µs; duty cycle £ 2%.

2

www.irf.com

Share Link: