NXP Semiconductors
8 W BTL or 2 ร 4 W SE power amplifier
Typical performance characteristics for BTL
application at VP = 12 V and RL = 8 ฮฉ
10
handbook, halfpage
THD
(%)
1
MGU307
10
handbook, halfpage
THD
(%)
1
10โ1
10โ1
Product specification
TDA1517ATW
MGU308
Po = 1 W
10โ120โ2
10โ1
1
10
Po (W)
Fig.7 THD as a function of Po.
10โ120โ2
10โ1
1
10
102
f (kHz)
Fig.8 THD as a function of frequency.
0
handbook, halfpage
SVRR
(dB)
โ20
MGU309
โ40
โ60
โ8100โ2
mute
10โ1
1
10
102
f (kHz)
10
handbook, halfpage
Vo
(V)
1
MGU310
10โ1
10โ2
10โ3
10โ4
0
2
4
6
8
10
12
VMODE (V)
Fig.9 SVRR as a function of frequency.
2001 Apr 17
12
Fig.10 Vo as a function of VMODE.