IRF7606TR View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF7606TR

HEXFET® Power MOSFET

International Rectifier 

IRF7606

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

-30 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = -1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– ––– 0.09

––– ––– 0.15

Ω

VGS = -10V, ID = -2.4A ƒ

VGS = -4.5V, ID = -1.2A ƒ

VGS(th)

Gate Threshold Voltage

-1.0 ––– ––– V VDS = VGS, ID = -250µA

gfs

Forward Transconductance

2.3 ––– ––– S VDS = -10V, ID = -1.2A

IDSS

Drain-to-Source Leakage Current

––– ––– -1.0

––– ––– -25

µA

VDS = -24V, VGS = 0V

VDS = -24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– -100 nA VGS = -20V

––– ––– 100

VGS = 20V

Qg

Total Gate Charge

––– 20 30

ID = -2.4A

Qgs

Gate-to-Source Charge

––– 2.1 3.1 nC VDS = -24V

Qgd

Gate-to-Drain ("Miller") Charge

––– 7.6 11

VGS = -10V, See Fig. 6 and 9 ƒ

td(on)

Turn-On Delay Time

––– 13 –––

VDD = -15V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 20 ––– ns ID = -2.4A

––– 43 –––

RG = 6.2Ω

tf

Fall Time

––– 39 –––

RD = 6.2Ω, See Fig. 10 ƒ

Ciss

Input Capacitance

––– 520 –––

VGS = 0V

Coss

Output Capacitance

––– 300 ––– pF VDS = -25V

Crss

Reverse Transfer Capacitance

––– 140 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min.

–––

–––

–––

–––

–––

Typ. Max. Units

––– -1.8

A

––– -19

––– -1.2 V

43 64 ns

50 76 nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = -2.4A, VGS = 0V ƒ

TJ = 25°C, IF = -2.4A

di/dt = -100A/µs ƒ

Notes:

 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

‚ ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%

„ Surface mounted on FR-4 board, t ≤ 10sec.

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