IRF520N
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.11 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ โโโ 0.20 โฆ VGS = 10V, ID = 5.7A ย
2.0 โโโ 4.0 V VDS = VGS, ID = 250ยตA
2.7 โโโ โโโ S VDS = 50V, ID = 5.7A
โโโ โโโ 25
โโโ โโโ 250
ยตA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 100 nA VGS = 20V
โโโ โโโ -100
VGS = -20V
โโโ โโโ 25
ID = 5.7A
โโโ โโโ 4.8 nC VDS = 80V
โโโ โโโ 11
VGS = 10V, See Fig. 6 and 13 ย
โโโ 4.5 โโโ
VDD = 50V
โโโ 23 โโโ ns ID = 5.7A
โโโ 32 โโโ
RG = 22โฆ
โโโ 23 โโโ
RD = 8.6โฆ, See Fig. 10 ย
Between lead,
D
โโโ 4.5 โโโ
6mm (0.25in.)
nH from package
G
โโโ 7.5 โโโ
and center of die contact
S
โโโ 330 โโโ
VGS = 0V
โโโ 92 โโโ pF VDS = 25V
โโโ 54 โโโ
ฦ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
โโโ
โโโ
โโโ
โโโ
โโโ
Typ.
โโโ
โโโ
โโโ
99
390
Max.
9.7
38
1.3
150
580
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25ยฐC, IS = 5.7A, VGS = 0V ย
TJ = 25ยฐC, IF = 5.7A
di/dt = 100A/ยตs ย
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ย VDD = 25V, starting TJ = 25ยฐC, L = 4.7mH
RG = 25โฆ, IAS = 5.7A. (See Figure 12)
ย ISD โค 5.7A, di/dt โค 240A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Pulse width โค 300ยตs; duty cycle โค 2%.