IRF7603 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF7603

HEXFET® Power MOSFET

International Rectifier 

IRF7603

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– ––– 0.035

––– ––– 0.060 Ω

VGS = 10V, ID = 3.7A ƒ

VGS = 4.5V, ID = 1.9A ƒ

VGS(th)

Gate Threshold Voltage

1.0 ––– ––– V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

4.3 ––– ––– S VDS = 10V, ID = 1.9A

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 25

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– -100 nA VGS = -20V

––– ––– 100

VGS = 20V

Qg

Total Gate Charge

––– 18 27

ID = 3.7A

Qgs

Gate-to-Source Charge

––– 2.4 3.6 nC VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

––– 5.6 8.4

VGS = 10V, See Fig. 6 and 9 ƒ

td(on)

Turn-On Delay Time

––– 5.7 –––

VDD = 15V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 28 ––– ns ID = 3.7A

––– 18 –––

RG = 6.2Ω

tf

Fall Time

––– 12 –––

RD = 4.0Ω, See Fig. 10 ƒ

Ciss

Input Capacitance

––– 520 –––

VGS = 0V

Coss

Output Capacitance

––– 200 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 80 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

––– ––– 1.8

––– ––– 30

MOSFET symbol

A showing the

integral reverse

p-n junction diode.

D

G

S

––– ––– 1.2 V TJ = 25°C, IS = 3.7A, VGS = 0V ƒ

––– 53 80 ns TJ = 25°C, IF = 3.7A

––– 87 130 nC di/dt = 100A/µs ƒ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ ISD ≤ 3.7A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

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