IRF3205S/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energyย
Min. Typ. Max. Units
Conditions
55 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.057 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ โโโ 8.0 mโฆ VGS = 10V, ID = 62A ย
2.0 โโโ 4.0 V VDS = VGS, ID = 250ยตA
44 โโโ โโโ S VDS = 25V, ID = 62Aย
โโโ โโโ 25
โโโ โโโ 250
ยตA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 100 nA VGS = 20V
โโโ โโโ -100
VGS = -20V
โโโ โโโ 146
ID = 62A
โโโ โโโ 35 nC VDS = 44V
โโโ โโโ 54
VGS = 10V, See Fig. 6 and 13
โโโ 14 โโโ
VDD = 28V
โโโ 101 โโโ ns ID = 62A
โโโ 50 โโโ
RG = 4.5โฆ
โโโ 65 โโโ
VGS = 10V, See Fig. 10 ย
Between lead,
D
โโโ 4.5 โโโ
6mm (0.25in.)
nH
from package
G
โโโ 7.5 โโโ
and center of die contact
S
โโโ 3247 โโโ
VGS = 0V
โโโ 781 โโโ
VDS = 25V
โโโ 211 โโโ pF ฦ = 1.0MHz, See Fig. 5
โโโ 1050ย 264ย mJ IAS = 62A, L = 138ยตH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ย Starting TJ = 25ยฐC, L = 138ยตH
RG = 25โฆ, IAS = 62A. (See Figure 12)
ย ISD โค 62A, di/dt โค 207A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 110
A showing the
integral reverse
G
โโโ โโโ 390
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 62A, VGS = 0V ย
โโโ 69 104 ns TJ = 25ยฐC, IF = 62A
โโโ 143 215 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย Pulse width โค 400ยตs; duty cycle โค 2%.
ย
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ย This is a typical value at device destruction and represents
operation outside rated limits.
ยThis is a calculated value limited to TJ = 175ยฐC.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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