Philips Semiconductors
High efficiency, high current DC/DC converter
Preliminary specification
TEA1210TS
QUICK REFERENCE DATA
Tamb = −40 to +80 °C; all voltages measured with respect to ground; positive currents flow into the IC; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Voltage levels
UPCONVERSION; pin U/D = LOW
VI
VO
VI(start)
VI(uvlo)
input voltage
output voltage
start-up input voltage
undervoltage lockout input voltage
DOWNCONVERSION; pin U/D = HIGH
VI
input voltage
VO
output voltage
GENERAL
Vfb
∆Vwindow
feedback input voltage
output voltage window
Current levels
Iq
Ishdwn
∆Ilim(up)
Ilim(down)
ILX
quiescent current on pins LX
current in shut-down mode
current limit deviation in up mode
current limit in down mode
maximum continuous current on
pins LX
IL < 200 mA
PWM mode
VI =2.40 V; VO = 3.60 V
Ilim(up) set to 2.0 A
Tamb = 60 °C
VI(start) −
2.90 −
5.50 V
5.50 V
1.20 1.60 1.85 V
1.50 2.10 2.70 V
2.90 −
1.30 −
5.50 V
5.50 V
1.20 1.25 1.30 V
1.5 2.0 3.0 %
100 125 150 µA
−
2
10
µA
−12 −
+12 %
4.8
A
−
−
1.8 A
Power MOSFETs
RDSon(N)
drain-to-source on-state resistance
NFET
RDSon(P)
drain-to-source on-state resistance
PFET
Tj = 27 °C
Tj = 27 °C
−
56
63
mΩ
−
68
77
mΩ
Efficiency
η
efficiency upconversion
VI = 2.4 V; VO = 3.6 V;
Tamb = 20 °C
IL = 1 mA
IL = 100 mA
IL = 500 mA
IL = 1.5 A; not continual
Timing
fsw
switching frequency
PWM mode
fsync
synchronization clock input frequency
tres
response time
from standby to Po(max)
83
86
−
%
90
93
−
%
92
94
−
%
84
86
−
%
480 600 720 kHz
9
13
20
MHz
−
25
−
µs
1999 Mar 08
3