ON Semiconductort
Horizontal Deflection
Transistor
. . . designed for use in televisions.
• Collector–Emitter Voltages VCES 1500 Volts
• Fast Switching — 400 ns Typical Fall Time
• Low Thermal Resistance 1_C/W Increased Reliability
• Glass Passivated (Patented Photoglass). Triple Diffused Mesa
Technology for Long Term Stability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
— Peak (Negative)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 95_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 95_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purpose, 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NOTES:
Symbol
VCEO(sus)
VCES
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
Symbol
RθJC
TL
BU208A
700
1500
5.0
5.0
7.5
4.0
3.5
12.5
0.625
–65 to +115
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/_C
_C
Max
Unit
1.6
_C/W
275
_C
1. Pulsed 5.0 ms, Duty Cycle v 10%.
2. See page 3 for Additional Ratings on A Type.
3. Figures in ( ) are Standard Ratings ON Semiconductor Guarantees are Superior.
BU208A
5.0 AMPERES
NPN SILICON
POWER TRANSISTOR
700 VOLTS
CASE 1–07
TO–204AA
(TO–3)
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 9
Publication Order Number:
BU208A/D