IRF1010NS/IRF1010NL
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energyยย
Min. Typ. Max. Units
55 โโโ โโโ V
โโโ 0.058 โโโ V/ยฐC
โโโ โโโ 11 mโฆ
2.0 โโโ 4.0 V
32 โโโ โโโ S
โโโ โโโ 25 ยตA
โโโ โโโ 250
โโโ โโโ 100
nA
โโโ โโโ -100
โโโ โโโ 120
โโโ โโโ 19 nC
โโโ โโโ 41
โโโ 13 โโโ
โโโ 76 โโโ
ns
โโโ 39 โโโ
โโโ 48 โโโ
โโโ 4.5 โโโ
nH
โโโ 7.5 โโโ
โโโ 3210 โโโ
โโโ 690 โโโ
โโโ 140 โโโ pF
โโโ 1030ย
250ย mJ
Conditions
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA ย
VGS = 10V, ID = 43A ย
VDS = VGS, ID = 250ยตA
VDS = 25V, ID = 43Aยย
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150ยฐC
VGS = 20V
VGS = -20V
ID = 43A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 ยย
VDD = 28V
ID = 43A
RG = 3.6โฆ
VGS = 10V, See Fig. 10 ยย
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ฦ = 1.0MHz, See Fig. 5 ย
IAS = 4.3A, L = 270ยตH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ย Starting TJ = 25ยฐC, L = 270ยตH
RG = 25โฆ, IAS = 43A, VGS=10V (See Figure 12)
ย ISD โค 43A, di/dt โค 210A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Pulse width โค 400ยตs; duty cycle โค 2%.
ย
This is a typical value at device destruction and
represents operation outside rated limits.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 85ย A showing the
integral reverse
G
โโโ โโโ 290
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 43A, VGS = 0V ย
โโโ 69 100 ns TJ = 25ยฐC, IF = 43A
โโโ 220 230 nC di/dt = 100A/ยตs ยย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย This is a calculated value limited to TJ = 175ยฐC .
ย Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ย Uses IRF1010N data and test conditions.
2014-8-30
2
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