SPN3055
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
IDSS
RDS(on)
gfs
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85℃
VGS=10V,ID=12A
VGS=4.5V,ID=6A
VDS=10V,ID=12A
VSD IS=6A,VGS =0V
30
V
1.0
3.0
±100 nA
1
uA
10
0.050 0.06
0.067 0.080
Ω
20
S
1.0 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID≡12A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=15Ω
ID≡1.0A,VGEN=10V
RG=6Ω
4.5
10
0.8
nC
1.0
240
110
pF
17
8
20
12
30
ns
17
35
8
20
2011/08/22 Ver.5
Page 3