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Part Name
Description
2SC1212A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC1212A
Silicon NPN Power Transistors
Inchange Semiconductor
2SC1212A Datasheet PDF : 4 Pages
1
2
3
4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1212 2SC1212A
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC1212
2SC1212A
I
C
=10mA ;R
BE
=
∞
V
(BR)CBO
Collector-base
breakdown voltage
2SC1212
2SC1212A
I
C
=1mA ;I
E
=0
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ;I
C
=0
V
CEsat
Collector-emitter saturation voltage I
C
=1A ;I
B
=0.1A
V
BE
Base-emitter voltage
I
C
=50mA ; V
CE
=4V
I
CBO
Collector cut-off current
V
CB
=50V; I
E
=0
h
FE-1
DC current gain
I
C
=50mA ; V
CE
=4V
h
FE-2
f
T
DC current gain
Transition frequency
I
C
=1A ; V
CE
=4V
I
C
=30mA ; V
CE
=4V
h
FE-1
Classifications
B
C
60-120
100-200
MIN TYP. MAX UNIT
50
V
80
50
V
80
4
V
1.5
V
1.0
V
5
μ
A
60
200
20
160
MHz
2
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