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Part Name
Description
2SD1277 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1277
Silicon NPN Power Transistors
Inchange Semiconductor
2SD1277 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD1277
2SD1277A
I
C
=30mA , I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=4A; I
B
=8mA
V
BEsat
I
CBO
Base-emitter saturation voltage
I
C
=4A ;I
B
=8mA
Collector
cut-off current
2SD1277 V
CB
=60V ;I
E
=0
2SD1277A V
CB
=80V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
h
FE-1
DC current gain
I
C
=8A ; V
CE
=3V
h
FE-2
DC current gain
I
C
=4A ; V
CE
=3V
f
T
Transition frequency
Switching times
I
C
=0.5A; V
CE
=10V;f=1MHz
t
on
Turn-on time
t
stg
Storage time
t
f
Fall time
I
C
=4A ;I
B1
=8mA
I
B2
=-8mA;V
CC
=50V
h
FE-2
Classifications
Q
R
2000-5000 4000-10000
MIN TYP. MAX UNIT
60
V
80
1.5
V
2
V
0.1
mA
500
2000
20
2
mA
10000
MHz
0.5
μ
s
4.0
μ
s
1.0
μ
s
2
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