Hi-Reliability Optically
Coupled Isolator
4N22, 4N23, 4N24 [A] (TX, TXV)
4N47, 4N48, 4N49 [A] (TX, TXV)
Absolute Maximum RaƟngs (TA = 25° C unless otherwise noted)
Storage Temperature Range
4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A (TX, TXV)
4N47, 4N47A, 4N48, 4N48A, 4N49, 4N49A (TX, TXV)
Opera ng Temperature Range
4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A (TX, TXV)
4N47, 4N47A, 4N48, 4N48A, 4N49, 4N49A (TX, TXV)
Input‐to‐Output Isola on Voltage
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Input Diode
Forward DC Current (65° C or below)
Reverse Voltage
Peak Forward Current (1 µs pulse width, 300 pps)
4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A (TX, TXV)
Power Dissipa on
Output Phototransistor (4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A )
Con nuous Collector Current
Collector‐Emi er Voltage
Collector‐Base Voltage
Emi er‐Base Voltage
Power Dissipa on
Output Phototransistor (4N47, 4N47A, 4N48, 4N48A, 4N49, 4N49A )
Con nuous Collector Current
Collector‐Emi er Voltage
Collector‐Base Voltage
Emi er‐Base Voltage
Power Dissipa on
Notes:
1. Measured with input leads shorted together and output leads shorted together.
2. RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.0 mW/° C above 65° C.
4. Derate linearly 3.0 mW/° C above 25° C.
‐65° C to +125° C
‐55° C to +125° C
± 1.00 kVDC(1)
260° C(2)
40 mA
2V
1A
60 mW(3)
50 mA
35 V
35 V
4V
300 mW(4)
50 mA
40 V
45 V
7.0 V
300 mW(4)
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue D 07/2016 Page 2