IRFBC40A
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient โโโ
RDS(on)
Static Drain-to-Source On-Resistance โโโ
VGS(th)
Gate Threshold Voltage
2.0
โโโ
IDSS
Drain-to-Source Leakage Current
โโโ
Gate-to-Source Forward Leakage
โโโ
IGSS
Gate-to-Source Reverse Leakage
โโโ
โโโ โโโ
0.66 โโโ
โโโ 1.2
โโโ 4.0
โโโ 25
โโโ 250
โโโ 100
โโโ -100
V
V/ยฐC
โฆ
V
ยตA
nA
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mAย
VGS = 10V, ID = 3.7A ย
VDS = VGS, ID = 250ยตA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125ยฐC
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
3.4 โโโ โโโ S VDS = 50V, ID = 3.7A
โโโ โโโ 42
โโโ โโโ 10
โโโ โโโ 20
โโโ 13 โโโ
ID = 6.2A
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13 ย
VDD = 300V
โโโ 23 โโโ ns ID = 6.2A
โโโ 31 โโโ
RG = 9.1โฆ
โโโ 18 โโโ
RD = 47โฆ,See Fig. 10 ย
โโโ 1036 โโโ
VGS = 0V
โโโ 136 โโโ
VDS = 25V
โโโ 7.0 โโโ pF ฦ = 1.0MHz, See Fig. 5
โโโ 1487 โโโ
โโโ 36 โโโ
โโโ 48 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 480V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ย
Parameter
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Thermal Resistance
Typ.
โโโ
โโโ
โโโ
Max.
570
6.2
13
Units
mJ
A
mJ
Parameter
RฮธJC
RฮธCS
RฮธJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
โโโ
0.50
Max.
1.0
โโโ
62
Units
ยฐC/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 6.2
A showing the
integral reverse
G
โโโ โโโ 25
p-n junction diode.
S
โโโ โโโ 1.5 V TJ = 25ยฐC, IS = 6.2A, VGS = 0V ย
โโโ 431 647 ns TJ = 25ยฐC, IF = 6.2A
โโโ 1.8 2.8 ยตC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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