NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
BGD904; BGD904MI
−50
CTB
(dB)
−60
−70
mda931
52
Vo
(1) (dBmV)
(2)
(3)
48
(4)
44
−80
40
−90
0
200
400
600
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
36
800 1000
f (MHz)
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
−50
Xmod
(dB)
−60
−70
mda932
52
Vo
(1) (dBmV)
(2)
48
(3)
(4)
44
−80
40
−90
0
200
400
600
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
36
800 1000
f (MHz)
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
−50
CSO
(dB)
−60
−70
−80
mda933
52
Vo
(1) (dBmV)
48
(2)
44
(3)
(4)
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
6