iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK3565,I2SK3565
·FEATURES
·Low drain-source on-resistance:
RDS(ON) =2.0Ω (typ.)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
5
IDM
Drain Current-Single Pulsed
15
PD
Total Dissipation @TC=25℃
45
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
2.78
62.5
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark