JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050S TRANSISTOR( NPN )
FEATURES
Power dissipation
PCM : 0.625 W(Tamb=25℃)
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
TO— 92
1.EMITTER
2. COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA , IE=0
40
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
Collector cut-off current
ICBO
VCB= 40 V , IE=0
0.1
Collector cut-off current
ICEO
VCE= 20 V , IB=0
0.1
Emitter cut-off current
IEBO
VEB= 3 V, IC=0
0.1
UNIT
V
V
V
μA
μA
μA
DC current gain
hFE(1)
VCE= 1 V, IC= 50m A
85
300
hFE(2)
VCE= 1 V, IC= 500m A
50
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50 mA
0.6
V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
VBE(sat)
IC=500mA, IB=50 mA
VCE= 6 V, IC=20mA
fT
150
f =30MHz
B
C
1.2
V
MHz
D
Range
85-160
120-200
160-300