IRF7103 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF7103

HEXFET® Power MOSFET

International Rectifier 

IRF7103

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

50 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

––– 0.049 –––

––– 0.11 0.13

––– 0.16 0.20

V/°C

Ω

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 3.0A ƒ

VGS = 4.5V, ID = 1.5A ƒ

VGS(th)

Gate Threshold Voltage

1.0 ––– 3.0 V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

––– 3.8 ––– S VDS = 15V, ID = 3.0A ƒ

IDSS

Drain-to-Source Leakage Current

––– ––– 2.0 µA VDS = 40V, VGS = 0V

––– ––– 25

VDS = 40V, VGS = 0V, TJ = 55 °C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = - 20V

Qg

Total Gate Charge

––– 12 30

ID = 2.0A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– 1.2 –––

––– 3.5 –––

nC VDS = 25V

VGS = 10V ƒ

td(on)

Turn-On Delay Time

––– 9.0 20

VDD = 25V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 8.0 20

––– 45 70

––– 25 50

ns ID = 1.0A

RG = 6.0Ω

RD = 25Ω ƒ

LD

Internal Drain Inductance

LS

Internal Source Inductance

D

––– 4.0 –––

nH Between lead,6mm(0.25in.)

from package and center G

––– 6.0 –––

of die contact

S

Ciss

Input Capacitance

––– 290 –––

VGS = 0V

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

––– 140 ––– pF VDS = 25V

––– 37 –––

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

V SD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 2.0

––– ––– 12

––– ––– 1.2

––– 70 100

––– 110 170

MOSFET symbol

D

showing the

A

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 1.5A, VGS = 0V ƒ

ns TJ = 25°C, IF = 1.5A

nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

‚ ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

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