2SA1357 Datasheet - Toshiba
Part Name
Description
MFG CO.
Strobe Flash Applications
Audio Power Amplifier Applications
• hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
• hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −1.0 V (max)
(IC = −4 A, IB = −0.1 A)
• High power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
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Part Name
Description
PDF
MFG CO.
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
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